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1

Characteristics of p-channel Si nano-crystal memory

Kwangseok Han, Ilgweon Kim, Hyungcheol Shin

Journal:

IEEE Transactions on Electron Devices

Year:

2001

Language:

english

File:

PDF, 157 KB

english, 2001

2

Room temperature single electron effects in a Si nano-crystal memory

Ilgweon Kim, Sangyeon Han, Kwangseok Han, Jongho Lee, Hyungcheol Shin

Journal:

IEEE Electron Device Letters

Year:

1999

Language:

english

File:

PDF, 120 KB

english, 1999

3

[IEEE IEEE Region 10 Conference. TENCON 99. 'Multimedia Technology for Asia-Pacific Information Infrastructure' - Cheju Island, South Korea (15-17 Sept. 1999)] Proceedings of IEEE. IEEE Region 10 Conference. TENCON 99. 'Multimedia Technology for Asia-Pacific Information Infrastructure' (Cat. No.99CH37030) - Characteristics of P-channel Si nano-crystal memory

Kwangseok Han,, Ilgweon Kim,, Hyungcheol Shin,

Year:

1999

Language:

english

File:

PDF, 204 KB

english, 1999

4

[IEEE International Electron Devices Meeting. Technical Digest. IEDM - San Francisco, CA, USA (10-13 Dec. 2000)] International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138) - Characteristics of p-channel Si nano-crystal memory

Kwangseok Han,, Ilgweon Kim,, Shungcheol Shin,

Year:

2000

Language:

english

File:

PDF, 372 KB

english, 2000

5

[IEEE ICVC'99. 6th International Conference on VLSI and CAD - Seoul, South Korea (26-27 Oct. 1999)] ICVC '99. 6th International Conference on VLSI and CAD (Cat. No.99EX361) - Comparison of the characteristics of tunneling oxide and tunneling ON for p-channel nano-crystal memory

Kwangseok Han,, Ilgweon Kim,, Hyungcheol Shin,

Year:

1999

Language:

english

File:

PDF, 336 KB

english, 1999

6

SP&R: SMT-based Simultaneous Place- &- Route for Standard Cell Synthesis of Advanced Nodes

Lee, Daeyeal, Park, Dongwon, Ho, Chia-Tung, Kang, Ilgweon, Kim, Hayoung, Gao, Sicun, Lin, Bill, Cheng, Chung-Kuan

Journal:

IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems

Year:

2020

File:

PDF, 8.10 MB

2020

7

A silicon quantum wire transistor with one-dimensional subband effects

Minkyu Je, Sangyeon Han, Ilgweon Kim, Hyungcheol Shin

Journal:

Solid-State Electronics

Year:

2000

Language:

english

File:

PDF, 292 KB

english, 2000

8

FN-degradation of S-RCAT with different grain size and oxidation method

Park, Segeun, Kim, Ilgweon, Park, Yongjik, Choi, Joosun, Roh, Yonghan

Journal:

Microelectronic Engineering

Year:

2014

Language:

english

File:

PDF, 1.50 MB

english, 2014

9

[IEEE International Electron Devices Meeting 1998. Technical Digest - San Francisco, CA, USA (6-9 Dec. 1998)] International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217) - Room temperature single electron effects in Si quantum dot memory with oxide-nitride tunneling dielectrics

Ilgweon Kim,, Sangyeon Han,, Hyungsik Kim,, Jongho Lee,, Bumho Choi,, Sungwoo Hwang,, Doyeol Ahn,, Hyungcheol Shin,

Year:

1998

Language:

english

File:

PDF, 737 KB

english, 1998

10

[IEEE 2000 Symposium on VLSI Technology. Digest of Technical Papers - Honolulu, HI, USA (13-15 June 2000)] 2000 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.00CH37104) - Improvement of the tail component in retention time distribution using buffered n-implantation with tilt and rotation (BNITR) for 0.2 um DRAM cell and beyond

Ilgweon Kim,, Namsung Kim,, Hyuckchai Jung,, Hoyup Kwon,, Seunghan Ok,, Jongmin Kim,, Pilbo Sim,, Jooseog Park,, Daeyoung Park,, Sungho Jang,

Year:

2000

Language:

english

File:

PDF, 235 KB

english, 2000

11

[Japan Soc. Appl. Phys 2001 Symposium on VLSI Technology. Digest of Technical Papers - Kyoto, Japan (12-14 June 2001)] 2001 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.01 CH37184) - Retention time improvement by fast-pull and fast-cool (FPFC) ingot growing combined with proper arrangement of subsequent thermal budget for 0.18 μm DRAM cell and beyond

Kim Ilgweon,, Kwon Jaesoon,, Lee Kyosung,, Kim Dongchan,, Shin Jungho,, Choy Junho,, Kim Namsung,, Yang Heesik,, Cheon Youngil,, Park Juseok,, Kwon Woyup,, Song Youngjin,, Park Daeyoung,,

Year:

2001

Language:

english

File:

PDF, 347 KB

english, 2001

12

[IEEE ESSDERC 2007 - 37th European Solid State Device Research Conference - Muenchen, Germany (2007.09.11-2007.09.13)] ESSDERC 2007 - 37th European Solid State Device Research Conference - Lateral-Extended (LatEx.) active for improvement of data retention time for sub 60nm DRAM era

Sungsam Lee,, Jongchul Park,, Kwangwoo Lee,, Sungho Jang,, Junho Lee,, Hyunsook Byun,, Ilgweon Kim,, Yongjin Choi,, Myoungseob Shim,, Duheon Song,, Joosung Park,, Taewoo Lee,, Dongho Shin,

Year:

2007

Language:

english

File:

PDF, 715 KB

english, 2007

13

Si Nanocrystal Memory Cell with Room-Temperature Single Electron Effects

Kim, Ilgweon, Han, Sangyeon, Han, Kwangseok, Lee, Jongho, Shin, Hyungcheol

Journal:

Japanese Journal of Applied Physics

Year:

2001

Language:

english

File:

PDF, 549 KB

english, 2001

14

Impact of Drain Induced Barrier Lowering on Read Scheme in Silicon Nanocrystal Memory with Two-Bit-per-Cell Operation

Park, Sangsu, Im, Hyunsik, Kim, Ilgweon, Hiramoto, Toshiro

Journal:

Japanese Journal of Applied Physics

Year:

2006

Language:

english

File:

PDF, 226 KB

english, 2006

15

[IEEE 6th International Conference on Solid-State and IC Technology - Shanghai, China (22-25 Oct. 2001)] 2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443) - The p-channel Si nano-crystal memory

Hyungcheol Shin,, Ilgweon Kim,, Kwangseok Han,

Year:

2001

Language:

english

File:

PDF, 268 KB

english, 2001

16

Roles of Residual Stress in Dynamic Refresh Failure of a Buried-Recessed-Channel-Array Transistor (B-CAT) in DRAM

Park, Segeun, Seo, Hyeongwon, Oh, Jeonghoon, Kim, Ilgweon, Hong, Hyoungsun, Jin, Gyoyoung, Roh, Yonghan

Journal:

IEEE Electron Device Letters

Year:

2016

Language:

english

File:

PDF, 259 KB

english, 2016

17

Off-state degradation with ac bias in PMOSFET

Park, Segeun, Jung, Hyuckchai, Oh, Jeonghoon, Kim, Ilgweon, Hong, Hyoungsun, Jin, Gyoyoung, Roh, Yonghan

Journal:

Microelectronics Reliability

Year:

2016

Language:

english

File:

PDF, 622 KB

english, 2016

18

[IEEE 2016 IEEE International Integrated Reliability Workshop (IIRW) - South Lake Tahoe, CA, USA (2016.10.9-2016.10.13)] 2016 IEEE International Integrated Reliability Workshop (IIRW) - Study on off-state hot carrier degradation and recovery of NMOSFET in SWD circuits of DRAM

Kim, Kangil, Chung, Ilsub, Sun, Duan, Rhe, Sangjae, Kim, Ilgweon, Hwang, Hongsun, Cho, Kangyong, Jin, Gyoyoung

Year:

2016

Language:

english

File:

PDF, 1.02 MB

english, 2016

19

Asymmetrical formation of etching residues and their roles in inner-gate-recessed-channel-array-transistor

Park, Segeun, Son, Youngwoong, Han, Sangyeon, Kim, Ilgweon, Roh, Yonghan

Journal:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures

Year:

2015

Language:

english

File:

PDF, 1.15 MB

english, 2015

20

[IEEE 2020 International Conference on Electronics, Information, and Communication (ICEIC) - Barcelona, Spain (2020.1.19-2020.1.22)] 2020 International Conference on Electronics, Information, and Communication (ICEIC) - Impact of Contact Resistance Reduction By Plasma Induced Damage Removal on Cold Temperature Characteristics of PMOSFETs and Inverter Circuits

Song, Junhwa, Choi, Byoungdeog, Kim, Jihun, Oh, Jeonghoon, Kim, Ilgweon

Year:

2020

File:

PDF, 675 KB

2020